dual igbtmod? a-series module 200 amperes/1700 volts CM200DY-34A 1 10/13 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control ups battery powered supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM200DY-34A is a 1700v (v ces ), 200 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 200 34 outline drawing and circuit diagram dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.18+0.04/-0.02 30.0+1.0/-0.5 d 3.660.01 93.00.25 e 1.890.01 48.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 k 0.55 14.0 l m6 metric m6 m m6 metric m6 dimensions inches millimeters n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.87 22.2 s 0.33 8.5 t 0.02 0.5 u 0.110 2.8 v 0.16 4.0 w 0.85 21.5 x 0.94 24.0 a x w f f b n l (4 pla ces) d m nuts (3 pla ces) g g h k k k pp p t thick u width q q v c s r g2 e2 e1 g1 c1 e2 c2e1 label c2e1 e2 c1 g2 e2 e1 g1 e
CM200DY-34A dual igbtmod? a-series module 200 amperes/1700 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 10/13 rev. 2 absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol CM200DY-34A units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1700 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (dc, t c = 109c)* 4 i c 200 amperes peak collector current (pulse repetition)* 2 i cm 400 amperes emitter current (t c = 25c) i e * 1 200 amperes peak emitter current (pulse repetition)* 2 i em * 1 400 amperes maximum collector dissipation (t c = 25c, t j 150c)* 2, * 4 p c 1980 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb weight 400 grams isolation voltage (main terminal to baseplate, f = 60hz, ac 1 min.) v iso 3500 volts static electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 2.0 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.5 7.0 8.5 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c* 3 2.2 2.8 volts i c = 200a, v ge = 15v, t j = 125c* 3 2.45 volts total gate charge q g v cc = 1000v, i c = 200a, v ge = 15v 1330 nc emitter-collector voltage v ec * 1 i e = 200a, v ge = 0v* 3 3.0 volts dynamic electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 49.4 nf output capacitance c oes v ce = 10v, v ge = 0v 5.6 nf reverse transfer capacitance c res 1.06 nf inductive turn-on delay time t d(on) 550 ns load rise time t r v cc = 1000v, i c = 200a, 190 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 2.4 , 750 ns time fall time t f inductive load 350 ns diode reverse recovery time t rr * 1 switching operation, 450 ns diode reverse recovery charge q rr * 1 i e = 200a 20 c *1 represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *2 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *3 pulse width and repetition rate should be such as to cause negligible temperature rise. *4 case temperature (t c ), and heatsink temperature (t f ) measured point is just under the chips.
CM200DY-34A dual igbtmod? a-series module 200 amperes/1700 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 10/13 rev. 2 thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt* 4 0.063 c/w thermal resistance, junction to case r th(j-c) d per fwdi* 4 0.11 c/w contact thermal resistance r th(c-f) thermal grease applied* 4, * 5 c/w external gate resistance r g 2.4 24 *4 case temperature (t c ), and heatsink temperature (t f ) measured point is just under the chips. *5 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 01 3 24 10 1 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 400 300 200 100 0 v ge = 10v t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 400a i c = 200a i c = 80a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246 81 0 04 81 21 62 0 0481 21 62 0 100 0 v ge = 20v 10 11 12 15 13 9 8 t j = 25 o c 200 300 400 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) 5 4 3 0 100 2 1 0 400 300 v ce = 15v t j = 25c t j = 125c 200 10 -1 t j = 25c t j = 125c
CM200DY-34A dual igbtmod? a-series module 200 amperes/1700 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 10/13 rev. 2 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.063c/w (igbt) r th(j-c) = 0.11c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 500 1000 2000 1500 v cc = 1000v emitter current, i c , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) v cc = 1000v v ge = 15v r g = 2.4 t j = 25c inductive load v cc = 800v i c = 200a 10 3 collector current, i c , (amperes) switching loss, e on , e off , e rr , (mj/pulse) 10 3 10 1 10 2 10 1 10 2 10 0 v cc = 1000v v ge = 15v r g = 2.4 t j = 125c inductive load v cc = 1000v v ge = 15v i c = 200a t j = 125c inductive load 10 3 switching loss vs. collector current (typical) gate resistance, r g , () switching loss, e on , e off , e rr , (mj/pulse) 10 3 10 0 10 1 10 2 10 1 10 2 switching loss vs. gate resistance (typical) i rr t rr collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, t d(on) , t r , t d(off) , t f , (ns) switching time vs. collector current (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 2.4 t j = 125c inductive load t f 10 3 gate resistance, r g , () 10 3 10 0 10 1 10 2 10 1 10 0 switching time, t d(on) , t r , t d(off) , t f , (ns) switching time vs. gate resistance (typical) t d(off) t d(on) e on e off e on e off e rr t r v cc = 1000v v ge = 15v i c = 200a t j = 125c inductive load t f 10 2 e rr
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